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BSC883N03LSGATMA1

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BSC883N03LSGATMA1

MOSFET N-CH 34V 17A/98A TDSON

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BSC883N03LSGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 34V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 17A at 25°C ambient temperature and 98A at 25°C case temperature. The device exhibits a low on-resistance of 3.8mOhm maximum at 30A and 10V Vgs. It is available in a PG-TDSON-8-1 package suitable for surface mounting and is supplied on tape and reel. Key parameters include a maximum gate charge of 34 nC at 10V Vgs and an input capacitance of 2800 pF maximum at 15V Vds. The maximum power dissipation is rated at 2.5W ambient or 57W case. This MOSFET is designed for applications requiring efficient power switching, commonly found in automotive and industrial power control systems. Its operating temperature range is -55°C to 150°C.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs3.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackagePG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)34 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 15 V

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