BSC882N03LSGATMA1
MOSFET N-CH 34V 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC882N03LSGATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 34V drain-to-source voltage (Vdss) and a low on-resistance of 4.2mOhm at 30A and 10V gate drive. The BSC882N03LSGATMA1 is housed in a compact PG-TDSON-8-1 package, suitable for surface mount assembly and supplied on tape and reel. Key parameters include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 3700 pF at 15V. The operating temperature range is -55°C to 150°C. This MOSFET is utilized in automotive, industrial power, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 34 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 15 V |
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