BSC670N25NSFDATMA1
MOSFET N-CH 250V 24A TDSON-8-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC670N25NSFDATMA1 is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 24A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 67mOhm at 24A and 10V Vgs, with a maximum power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 2410 pF at 125V. Operating from -55°C to 175°C (TJ), this MOSFET is housed in a PG-TDSON-8-1 package suitable for surface mounting and is supplied on tape and reel. This technology is widely utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 125 V |
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