BSC440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC440N10NS3GATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 5.3A at ambient temperature (Ta) and 18A at case temperature (Tc). With a maximum power dissipation of 29W (Tc), it features a low on-resistance (Rds On) of 44mOhm at 12A and 10V. The device operates with a gate-source voltage (Vgs) range of ±20V, and its threshold voltage (Vgs(th)) is a maximum of 3.5V at 12µA. Key parameters include a gate charge (Qg) of 10.8 nC at 10V and input capacitance (Ciss) of 810 pF at 50V. The BSC440N10NS3GATMA1 is housed in a PG-TDSON-8-1 package for surface mounting and is supplied in Digi-Reel® packaging. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 12µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 50 V |
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