BSC430N25NSFDATMA1
MOSFET N-CH 250V TSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BSC430N25NSFDATMA1 is a high-performance N-Channel MOSFET from the OptiMOS™ and StrongIRFET™ series. Engineered for demanding applications, this component features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 36A at 25°C case temperature. The device utilizes Metal Oxide (MOSFET) technology and is housed in a PG-TSON-8-3 surface mount package, supplied on tape and reel. Its robust design makes it suitable for power switching in industrial automation, power supply, and renewable energy systems. The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: OptiMOS™, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TSON-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
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