BSC350N20NSFDATMA1
MOSFET N-CH 200V 35A TDSON-8-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSC350N20NSFDATMA1 is a 200V N-Channel Power MOSFET in a PG-TDSON-8-1 package. This device offers a continuous drain current of 35A at 25°C (Tc) and a maximum power dissipation of 150W (Tc). The Rds(on) is rated at 35mOhm at 35A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 2410 pF at 100V. It features a gate-source voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 4V at 90µA. This component is suitable for applications in automotive and industrial power management systems. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 100 V |
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