BSC240N12NS3 G
MOSFET N-CH 120V 37A TDSON-8-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC240N12NS3-G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 120V drain-to-source voltage (Vdss) and a continuous drain current of 37A at 25°C (Tc), with a maximum power dissipation of 66W (Tc). The low on-resistance (Rds On) of 24mOhm at 31A and 10V gate drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 27 nC @ 10V and input capacitance (Ciss) of 1900 pF @ 60V. The component is housed in a PG-TDSON-8-1 package for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET technology is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 60 V |