BSC220N20NSFDATMA1
MOSFET N-CH 200V 52A TSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC220N20NSFDATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 52A at 25°C (Tc), with a maximum power dissipation of 214W (Tc). The device exhibits a low on-resistance (Rds On) of 22mOhm at 52A and 10V gate-source voltage.
Key electrical characteristics include a maximum gate charge (Qg) of 43 nC at 10V and an input capacitance (Ciss) of 3680 pF at 100V. The MOSFET operates with a gate drive voltage up to 10V and has a maximum gate-source voltage of ±20V. The threshold voltage (Vgs(th)) is 4V at 137µA.
Housed in an 8-PowerTDFN (PG-TSON-8-3) surface mount package, the BSC220N20NSFDATMA1 is suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in power conversion and management systems across various industries, including automotive, industrial, and consumer electronics. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 137µA |
| Supplier Device Package | PG-TSON-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 100 V |
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