BSC205N10LS G
MOSFET N-CH 100V 7.4A/45A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSC205N10LS-G is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 7.4A at 25°C ambient (Ta) and 45A at 25°C case (Tc). The device exhibits a low on-resistance (Rds On) of 20.5mOhm at 45A and 10V Vgs.
The BSC205N10LS-G is housed in an 8-PowerTDFN (PG-TDSON-8-1) package, suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 41nC at 10V Vgs and a maximum input capacitance (Ciss) of 2900pF at 50V Vds. With a maximum power dissipation of 76W at 25°C case, this MOSFET is well-suited for demanding applications in automotive, industrial power, and consumer electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 76W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 43µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 50 V |
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