BSC196N10NSGATMA1
MOSFET N-CH 100V 8.5A/45A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ BSC196N10NSGATMA1 is a N-Channel Power MOSFET featuring a 100V drain-source voltage (Vdss). This device offers a continuous drain current (Id) of 8.5A at 25°C ambient and 45A at 25°C case temperature, with a maximum power dissipation of 78W at the same case temperature. The Rds(on) is specified at a maximum of 19.6mOhm at 45A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 2300 pF at 50V. The BSC196N10NSGATMA1 is housed in a PG-TDSON-8-1 package, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C. This component is utilized in applications such as power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 42µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
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