BSC160N15NS5ATMA1
MOSFET N-CH 150V 56A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSC160N15NS5ATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain current (Id) of 56 A at 25°C. The device offers a low on-resistance (Rds On) of 16 mOhm at 28 A and 10 V, with a maximum power dissipation of 96 W (Tc). Designed for efficient switching applications, it has a gate charge (Qg) of 23.1 nC at 10 V and an input capacitance (Ciss) of 1820 pF at 75 V. The BSC160N15NS5ATMA1 is housed in an 8-PowerTDFN (PG-TDSON-8-7) package and is supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 60µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V |
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