BSC159N10LSFGATMA1
MOSFET N-CH 100V 9.4A/63A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC159N10LSFGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 100V drain-source voltage (Vdss) and a continuous drain current of 9.4A at ambient temperature (Ta) and 63A at case temperature (Tc). The Rds(on) is rated at a maximum of 15.9mOhm at 50A and 10V Vgs. With a maximum power dissipation of 114W (Tc), this MOSFET is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 35 nC at 10V Vgs and input capacitance (Ciss) of 2500 pF at 50V Vds. The drive voltage range is specified from 4.5V to 10V. The component is housed in a PG-TDSON-8-1 package, facilitating surface mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply, automotive, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 72µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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