BSC152N10NSFGATMA1
MOSFET N-CH 100V 9.4A/63A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSC152N10NSFGATMA1, features a 100V drain-source breakdown voltage and a continuous drain current of 9.4A at 25°C ambient and 63A at 25°C case temperature. This device offers a low on-resistance of 15.2mOhm maximum at 25A and 10V gate-source voltage. The BSC152N10NSFGATMA1 is packaged in a PG-TDSON-8-1 surface mount package, suitable for demanding applications in automotive and industrial power switching. Key parameters include a maximum power dissipation of 114W at the case temperature, a gate charge of 29nC at 10V, and input capacitance of 1900pF at 50V. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 72µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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