BSC146N10LS5ATMA1
MOSFET N-CH 100V 44A TDSON-8-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series BSC146N10LS5ATMA1 is a N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current of 44A at 25°C (Tc). The device offers a low on-resistance of 14.6mOhm maximum at 22A and 10V, with a gate threshold voltage (Vgs(th)) of 2.3V maximum at 23µA. Typical drive voltages range from 4.5V to 10V.
The BSC146N10LS5ATMA1 is housed in a PG-TDSON-8-6 package for surface mounting, providing excellent thermal performance with a power dissipation of 52W at 25°C (Tc) and 2.5W at 25°C (Ta). Key parameters include a gate charge (Qg) of 10 nC at 4.5V and input capacitance (Ciss) of 1300 pF at 50V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power supply designs. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 23µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
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