BSC130P03LSGAUMA1
MOSFET P-CH 30V 12A/22.5A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC130P03LSGAUMA1 is a P-Channel Power MOSFET from the OptiMOS™ series. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 12A at ambient temperature (Ta) and 22.5A at case temperature (Tc). The device offers a low on-resistance (Rds On) of 13mOhm at 22.5A and 10V gate-source voltage (Vgs). Dissipation ratings are 2.5W (Ta) and 69W (Tc).
Key parameters include a gate charge (Qg) of 73.1 nC (max) at 10V Vgs and input capacitance (Ciss) of 3670 pF (max) at 15V Vds. The operating temperature range is from -55°C to 150°C (TJ). Supplied in a PG-TDSON-8-3 package, this MOSFET is suitable for surface mounting. Applications include automotive systems, power management, and industrial equipment. The BSC130P03LSGAUMA1 is delivered on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 22.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 150µA |
| Supplier Device Package | PG-TDSON-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 73.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3670 pF @ 15 V |
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