BSC123N10LSGATMA1
MOSFET N-CH 100V 10.6/71A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC123N10LSGATMA1 is an N-Channel power MOSFET featuring 100V drain-source voltage. This component offers a continuous drain current of 10.6A at ambient temperature and 71A at case temperature, with a maximum power dissipation of 114W at case temperature. The device exhibits a low on-resistance of 12.3mOhm at 50A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 68nC at 10V and input capacitance (Ciss) of 4900pF at 50V. It is supplied in a PG-TDSON-8-1 package suitable for surface mounting and operates within a temperature range of -55°C to 150°C. Applications for this MOSFET are found in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 72µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 50 V |
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