BSC120N12LSGATMA1
TRENCH >=100V PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC120N12LSGATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 120V drain-source breakdown voltage and a continuous drain current capability of 10A at ambient temperature (Ta) and 68A at case temperature (Tc). With a maximum power dissipation of 114W (Tc), it is suitable for high-power switching scenarios. The Rds(On) is specified at a low 12mOhm at 34A and 10V gate-source voltage, indicating excellent conduction efficiency. The PG-TDSON-8 package facilitates efficient thermal management for surface mount applications. Key parameters include a maximum gate charge of 51nC at 10V and an input capacitance of 4900pF at 60V. This MOSFET is utilized across various industries including automotive, industrial power, and high-performance computing.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 72µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 60 V |
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