BSC119N03S G
MOSFET N-CH 30V 11.9A/30A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSC119N03S-G, is designed for demanding applications. This device offers a 30V drain-source voltage (Vdss) and a continuous drain current capability of 11.9A at ambient temperature (Ta) and 30A at case temperature (Tc). With a low on-resistance of 11.9mOhm at 30A and 10V Vgs, it minimizes conduction losses. The BSC119N03S-G features a maximum power dissipation of 2.8W (Ta) and 43W (Tc), supporting efficient thermal management. Key parameters include a gate charge of 11 nC (max) at 5V Vgs and input capacitance of 1370 pF (max) at 15V Vds. The device utilizes N-Channel Metal Oxide technology and is supplied in the PG-TDSON-8-1 package, suitable for surface mount applications. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is widely employed in automotive, industrial power control, and high-efficiency power conversion systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 15 V |
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