BSC106N025S G
MOSFET N-CH 25V 13A/30A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC106N025S-G is an N-Channel Power MOSFET from the OptiMOS™ series. This component offers a 25V drain-source breakdown voltage and a continuous drain current capability of 13A at ambient temperature and 30A at case temperature. The device features a low on-resistance of 10.6mOhm maximum at 30A and 10V Vgs. It is supplied in a PG-TDSON-8-1 package, suitable for surface mounting. Key parameters include a gate charge of 11 nC at 5V Vgs and an input capacitance of 1370 pF maximum at 15V Vds. Power dissipation is rated at 2.8W (Ta) and 43W (Tc). This MOSFET is utilized in applications such as power management, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 15 V |
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