BSC105N10LSFGATMA1
MOSFET N-CH 100V 11.4/90A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC105N10LSFGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 11.4A at ambient temperature (Ta) and 90A at case temperature (Tc). The device offers a maximum power dissipation of 156W (Tc) and a low on-resistance of 10.5mOhm at 50A and 10V gate-source voltage. The BSC105N10LSFGATMA1 utilizes Surface Mount technology, packaged in a PG-TDSON-8-1 (8-PowerTDFN) package, supplied on tape and reel. Key characteristics include a maximum gate charge (Qg) of 53 nC at 10V and an input capacitance (Ciss) of 3900 pF at 50V. This MOSFET is suitable for demanding applications in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 110µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 50 V |
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