BSC100N03MSGATMA1
MOSFET N-CH 30V 12A/44A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC100N03MSGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 12A at ambient temperature (Ta) and 44A at case temperature (Tc). The low on-resistance (Rds(on)) of 10mOhm at 30A and 10V gate-source voltage (Vgs) minimizes conduction losses. It offers a maximum power dissipation of 2.5W (Ta) and 30W (Tc). Key parameters include a gate charge (Qg) of 23nC at 10V and input capacitance (Ciss) of 1700pF at 15V. The MOSFET supports gate drive voltages from 4.5V to 10V and has a maximum Vgs of ±20V. The threshold voltage (Vgs(th)) is 2V at 250µA. This component is housed in an 8-PowerTDFN package (PG-TDSON-8-5) and is suitable for surface mounting. It is designed for operation across an extended temperature range of -55°C to 150°C. Applications include power management, automotive systems, and industrial power supplies. The part is supplied in Cut Tape (CT).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |