BSC0996NSATMA1
MOSFET N-CH 34V 13A TDSON-8-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS™ BSC0996NSATMA1 is an N-Channel Power MOSFET designed for high-performance applications. Featuring a drain-source voltage (Vdss) of 34V and a continuous drain current (Id) of 13A at 25°C (Ta), this component offers a low on-resistance (Rds On) of 9mOhm at 8A and 10V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W (Ta). Key electrical characteristics include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1500 pF at 15V. Supplied in a PG-TDSON-8-5 package, this MOSFET is suitable for surface mounting and is delivered on tape and reel. This component is utilized across various industries, including automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 34 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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