BSC097N06NSTATMA1
MOSFET N-CH 60V 13A/48A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC097N06NSTATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 60 V drain-source voltage (Vdss) and supports a continuous drain current of 13 A at ambient temperature (Ta) and 48 A at case temperature (Tc). With a maximum on-resistance (Rds On) of 9.7 mOhm at 40 A and 10 V gate-source voltage (Vgs), it minimizes conduction losses. The 8-PowerTDFN (PG-TDSON-8-1) package offers excellent thermal performance, enabling up to 3 W (Ta) or 43 W (Tc) power dissipation. Key parameters include a gate charge (Qg) of 15 nC at 10 V and input capacitance (Ciss) of 1075 pF at 30 V. Operating across a junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in automotive, industrial power supplies, and server power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 14µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1075 pF @ 30 V |
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