BSC094N03S G
MOSFET N-CH 30V 14.6A/35A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSC094N03S-G is an N-channel Power MOSFET designed for demanding applications. This device features a 30 V Drain-to-Source voltage (Vdss) and supports a continuous drain current of 14.6 A at 25°C ambient or 35 A at 25°C case temperature. The Rds(on) is specified at a maximum of 9.4 mOhm when driven at 10 V Vgs with a 35 A drain current. With a maximum gate charge of 14 nC at 5 V Vgs and an input capacitance (Ciss) of 1800 pF at 15 V Vds, it offers efficient switching characteristics. The BSC094N03S-G dissipates up to 2.8 W at 25°C ambient and 52 W at 25°C case. It is packaged in a PG-TDSON-8-1 (8-PowerTDFN) for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.6A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 25µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |
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