BSC090N03MSGATMA1
MOSFET N-CH 30V 12A/48A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies BSC090N03MSGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component offers a Drain-Source Voltage (Vdss) of 30V and features a low on-resistance of 9mOhm at 30A and 10V Vgs. Continuous drain current is rated at 12A (Ta) and 48A (Tc), with power dissipation capabilities of 2.5W (Ta) and 32W (Tc). The device is housed in a PG-TDSON-8-5 package for surface mounting. Key parameters include a Gate Charge (Qg) of 24 nC at 10V and Input Capacitance (Ciss) of 1900 pF at 15V. This MOSFET is suitable for applications in automotive and industrial power management systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 32W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
