BSC0908NSATMA1
MOSFET N-CH 34V 14A/49A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSC0908NSATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 34V drain-source voltage (Vdss) and supports continuous drain current of 14A at a typical ambient temperature (Ta) of 25°C, and up to 49A at case temperature (Tc) of 25°C. The low on-resistance (Rds(on)) of 8mOhm at 30A and 10V gate drive ensures minimal conduction losses. With a maximum power dissipation of 2.5W (Ta) and 30W (Tc), it is suitable for demanding thermal environments. The PG-TDSON-8-1 package offers excellent thermal performance for surface mount integration. Key parameters include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 1220 pF at 15V. This MOSFET is utilized across industries such as automotive, industrial automation, and consumer electronics for power management and switching functions. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 34 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 15 V |
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