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BSC085N025S G

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BSC085N025S G

MOSFET N-CH 25V 14A/35A TDSON

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Infineon Technologies OptiMOS™ BSC085N025S-G is an N-Channel Power MOSFET designed for demanding applications. This component features a 25 V drain-source voltage (Vdss) and supports continuous drain currents of 14 A at ambient temperature (Ta) and 35 A at case temperature (Tc). With a maximum on-resistance (Rds On) of 8.5 mOhm at 35 A and 10 V gate-source voltage (Vgs), it offers efficient power handling. The device is rated for 2.8 W (Ta) and 52 W (Tc) maximum power dissipation. It is supplied in a PG-TDSON-8-1 package for surface mounting and operates over a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 14 nC (max) at 5 V and input capacitance (Ciss) of 1800 pF (max) at 15 V. This MOSFET is suitable for use in automotive and industrial power management systems.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id2V @ 25µA
Supplier Device PackagePG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 15 V

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