BSC084P03NS3EGATMA1
MOSFET P-CH 30V 14.9A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC084P03NS3EGATMA1 is a P-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage rating and supports a continuous drain current of 14.9A at ambient temperature and 78.6A at case temperature. The device offers a low on-resistance of 8.4mOhm at 50A with a 10V gate-source voltage. Engineered for efficient power management, it has a maximum power dissipation of 2.5W at ambient and 69W at case temperature. The BSC084P03NS3EGATMA1 utilizes a PG-TDSON-8-5 package for surface mounting, suitable for thermal considerations in high-power density designs. Typical applications include automotive and industrial power control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.9A (Ta), 78.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 110µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 57.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF @ 15 V |
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