BSC082N10LSGATMA1
MOSFET N-CH 100V 13.8A 8TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC082N10LSGATMA1 is a N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 13.8A at 25°C ambient, scaling to 100A at 25°C case temperature. With a maximum power dissipation of 156W (Tc), it offers a low Rds On of 8.2mOhm at 100A and 10V. The device utilizes a PG-TDSON-8-1 package for surface mounting, providing excellent thermal performance. Key electrical characteristics include a gate charge (Qg) of 104 nC at 10V and input capacitance (Ciss) of 7400 pF at 50V. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for demanding power conversion and management solutions across automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 110µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 50 V |
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