BSC080P03LSGAUMA1
MOSFET P-CH 30V 16A/30A TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSC080P03LSGAUMA1 is a P-Channel MOSFET designed for high-performance power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and supports continuous drain currents of 16A at ambient temperature and 30A at case temperature. The low on-resistance of 8mOhm at 30A and 10V drive voltage, coupled with a maximum power dissipation of 89W at case temperature, makes it suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 122.4 nC at 10V and input capacitance (Ciss) of 6140 pF at 15V. The device is housed in a PG-TDSON-8-3 package, facilitating surface mounting. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 122.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6140 pF @ 15 V |
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