BSC080N03MSGATMA1
MOSFET N-CH 30V 13A/53A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC080N03MSGATMA1 is an N-channel Power MOSFET designed for high-efficiency power conversion. This device features a 30V drain-source voltage and a continuous drain current capability of 13A at ambient temperature and 53A at case temperature. With a low Rds(on) of 8mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 2.5W (Ta) and 35W (Tc), suitable for demanding applications. Key parameters include a gate charge of 27 nC at 10V Vgs and an input capacitance of 2100 pF at 15V Vds. It is packaged in a PG-TDSON-8-5 (8-PowerTDFN) surface mount configuration and supplied on Digi-Reel®. This component finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 15 V |
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