BSC080N03LSGATMA1
MOSFET N-CH 30V 14A/53A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC080N03LSGATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 30V drain-source voltage rating and supports continuous drain currents of 14A at ambient temperature and 53A at case temperature. The Rds(on) is optimized at 8mOhm maximum for a 30A drain current and 10V gate-source voltage. With a maximum power dissipation of 2.5W (Ta) and 35W (Tc), it is suitable for demanding applications. The component is housed in an 8-PowerTDFN (PG-TDSON-8-5) package with a surface mount design. Key parameters include a gate charge of 21nC at 10V and input capacitance of 1700pF at 15V. Operating temperatures range from -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |
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