BSC0805LSATMA1
MOSFET N-CH 100V 79A TDSON-8-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series BSC0805LSATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 79A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The BSC0805LSATMA1 exhibits a low on-resistance (Rds On) of 7mOhm at 40A and 10V, and a gate charge (Qg) of 20 nC at 4.5V. It is housed in a PG-TDSON-8-6 package and supports surface mounting with a tape and reel packaging. Key parameters include input capacitance (Ciss) of 2700 pF at 50V and a gate-source threshold voltage (Vgs(th)) of 2.3V. This MOSFET is suitable for applications in automotive, industrial, and consumer electronics power management.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 49µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
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