BSC0804LSATMA1
MOSFET N-CH 100V 40A TDSON-8-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 BSC0804LSATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage and a continuous drain current capability of 40A at 25°C (Tc). The low on-resistance of 9.6mOhm at 20A and 10V, coupled with a maximum gate charge of 14.6 nC at 4.5V, ensures efficient switching performance. The BSC0804LSATMA1 is housed in a PG-TDSON-8-6 package, suitable for surface mounting and offering excellent thermal management with a maximum power dissipation of 83W (Tc). Its operating temperature range of -55°C to 175°C (TJ) makes it suitable for use in automotive and industrial power systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 36µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
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