BSC0802LSATMA1
MOSFET N-CH 100V 20A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number BSC0802LSATMA1, offers a 100V drain-source voltage with a continuous drain current of 20A at ambient temperature and 100A at case temperature. This surface mount device, packaged in PG-TDSON-8-7, features a low Rds(on) of 3.4mOhm at 50A and 10V, supported by a 4.5V to 10V drive voltage range. Key parameters include a maximum gate charge of 46nC at 4.5V and an input capacitance of 6500pF at 50V. The device supports a maximum power dissipation of 156W at the case temperature and operates within an extended temperature range of -55°C to 150°C. This component is suitable for applications in power supply, automotive, and industrial sectors.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 115µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 50 V |
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