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BSC079N10NSGATMA1

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BSC079N10NSGATMA1

MOSFET N-CH 100V 13.4A 8TDSON

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ BSC079N10NSGATMA1 is an N-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 13.4A at 25°C (Ta), scaling up to 100A at 25°C (Tc). Boasting a low on-resistance (Rds On) of 7.9mOhm at 50A and 10V, it minimizes conduction losses. The 8-PowerTDFN package, specifically PG-TDSON-8-1, supports efficient thermal management with a maximum power dissipation of 156W (Tc). Key parameters include a Gate Charge (Qg) of 87nC at 10V and an input capacitance (Ciss) of 5900pF at 50V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in automotive and industrial power management systems. The device utilizes MOSFET technology and supports a Vgs (Max) of ±20V and a threshold voltage (Vgs(th)) of 4V at 110µA. It is supplied in Tape & Reel packaging.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs7.9mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)156W (Tc)
Vgs(th) (Max) @ Id4V @ 110µA
Supplier Device PackagePG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5900 pF @ 50 V

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