BSC079N03SG
MOSFET N-CH 30V 14.6A/40A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC079N03SG is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 14.6A at ambient temperature (Ta) and 40A at case temperature (Tc). With a low on-resistance (Rds On) of 7.9mOhm at 40A and 10V, it minimizes conduction losses. The BSC079N03SG is packaged in a PG-TDSON-8-1 (8-PowerTDFN) surface mount package, suitable for automated assembly and providing excellent thermal performance with a maximum power dissipation of 2.8W (Ta) and 60W (Tc). Key electrical parameters include a gate charge (Qg) of 17 nC at 5V and input capacitance (Ciss) of 2230 pF at 15V. This device is ideal for power management solutions in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.6A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2230 pF @ 15 V |
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