BSC079N03LSCGATMA1
MOSFET N-CH 30V 14A/50A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC079N03LSCGATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 14A at ambient temperature and 50A at case temperature. The low on-resistance of 7.9mOhm at 30A and 10V gate-source voltage contributes to minimized conduction losses. With a maximum power dissipation of 2.5W (Ta) and 30W (Tc), and a junction-to-case thermal resistance, it is suitable for demanding thermal environments. The PG-TDSON-8-1 package ensures efficient heat dissipation for surface mount designs. Gate drive voltages range from 4.5V to 10V, with a maximum gate charge of 19 nC at 10V. Typical applications include automotive power management, consumer electronics, and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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