BSC072N025S G
MOSFET N-CH 25V 15A/40A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC072N025S-G is an N-channel power MOSFET designed for demanding applications. This device features a 25V drain-source voltage and a continuous drain current capability of 15A at ambient temperature and 40A at case temperature. The low on-resistance of 7.2mOhm at 40A and 10V gate-source voltage, achieved with a 4.5V to 10V drive, minimizes conduction losses. With a maximum power dissipation of 2.8W (Ta) and 60W (Tc), it is suitable for power management solutions. The MOSFET offers a gate charge of 18 nC (max) at 5V and an input capacitance of 2230 pF (max) at 15V. Packaged in an 8-lead PG-TDSON-8-1, this surface-mount component operates across a temperature range of -55°C to 150°C. The OptiMOS™ technology delivers efficient switching and high power density, making it valuable in automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2230 pF @ 15 V |
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