BSC0704LSATMA1
MOSFET N-CH 60V 11A/47A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number BSC0704LSATMA1, offers a 60V drain-source voltage and a continuous drain current of 11A at 25°C ambient (47A at 25°C case). This device features a low Rds(on) of 9.4mOhm maximum at 24A and 10V Vgs. The PG-TDSON-8-6 package provides efficient thermal dissipation with a maximum power dissipation of 2.1W (Ta) or 36W (Tc). Key parameters include a gate charge of 9.4 nC maximum at 4.5V Vgs and an input capacitance of 1300 pF maximum at 30V Vds. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 14µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 30 V |