BSC0703LSATMA1
MOSFET N-CH 60V 15A/64A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC0703LSATMA1 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source breakdown voltage and offers a continuous drain current of 15A at ambient temperature and 64A at case temperature. With a low on-resistance of 6.5mOhm at 32A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 13 nC at 4.5V. Input capacitance (Ciss) is specified at 1800 pF maximum at 30V Vds. The PG-TDSON-8-6 package provides excellent thermal performance, with maximum power dissipation of 2.5W at ambient and 46W at case temperature. Operating reliably from -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial power supplies, and power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 20µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 30 V |
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