BSC0702LSATMA1
MOSFET N-CH 60V 100A SUPERSO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC0702LSATMA1 is an N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The low on-resistance of 2.3mOhm at 50A and 10V (Vgs) is achieved through Infineon's advanced OptiMOS™ technology, minimizing conduction losses. Key electrical parameters include a gate charge (Qg) of 30 nC at 4.5V and input capacitance (Ciss) of 4400 pF at 30V. The device is housed in an 8-PowerTDFN package (PG-TDSON-8) suitable for surface mounting and supplied in tape and reel (TR). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is frequently utilized in automotive power management, industrial motor control, and server power supplies where robust performance and thermal management are critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 49µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 30 V |
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