BSC059N03ST
MOSFET N-CH 30V 19A/89A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC059N03ST is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 19A at 25°C ambient temperature and 89A at 25°C case temperature. The low on-resistance of 5.5mOhm is achieved at 50A and 10V Vgs. Key parameters include a gate charge (Qg) of 21 nC at 5V Vgs and input capacitance (Ciss) of 2670 pF at 15V Vds. The device is packaged in an 8-PowerTDFN (PG-TDSON-8-1) for surface mounting, supplied on tape and reel. This MOSFET is suitable for applications requiring efficient power switching in areas such as automotive electronics and industrial power supplies. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 35µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 15 V |
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