BSC059N03S G
MOSFET N-CH 30V 17.5A/73A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC059N03S-G is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 17.5 A at 25°C ambient temperature and up to 73 A at 25°C case temperature. The low on-resistance (Rds On) of 5.5 mOhm at 50 A and 10 V gate drive ensures minimal conduction losses. With a maximum power dissipation of 17.5 W (Ta) and 48 W (Tc), it is suitable for demanding thermal environments. The BSC059N03S-G is presented in the PG-TDSON-8-1 package, a surface-mount 8-PowerTDFN, facilitating high-density board layouts. Typical applications include automotive power, industrial power supplies, and battery management systems. Key electrical parameters include a gate charge (Qg) of 21 nC at 5 V and input capacitance (Ciss) of 2670 pF at 15 V. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 17.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 35µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 15 V |
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