BSC057N03MSGATMA1
MOSFET N-CH 30V 15A/71A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC057N03MSGATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage and offers a continuous drain current of 15A at ambient temperature and 71A at case temperature. With a low on-resistance of 5.7mOhm at 30A and 10V Vgs, it ensures efficient power transfer. The MOSFET is housed in an 8-PowerTDFN (PG-TDSON-8-5) package, suitable for surface mounting. Key parameters include a gate charge of 40 nC at 10V and an input capacitance of 3100 pF at 15V. The maximum power dissipation is 2.5W (Ta) and 45W (Tc). This component is utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 15 V |
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