BSC057N03LSGATMA1
MOSFET N-CH 30V 17A/71A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies BSC057N03LSGATMA1 is an N-Channel MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 17A at ambient temperature (Ta) and 71A at case temperature (Tc). With a maximum on-resistance (Rds On) of 5.7mOhm at 30A and 10V gate drive, it demonstrates efficient power handling. The device is packaged in a PG-TDSON-8-5 (8-PowerTDFN) for surface mounting and supports a wide operating temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 2400 pF at 15V. This MOSFET is suitable for applications in the automotive and industrial sectors requiring robust power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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