BSC052N03S G
MOSFET N-CH 30V 18A/80A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC052N03S-G is an N-channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 18A at 25°C ambient and 80A at 25°C case temperature. With a low on-resistance (Rds On) of 5.2mOhm at 50A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 22nC at 5V Vgs and input capacitance (Ciss) of 2820pF at 15V Vds. The BSC052N03S-G is housed in an 8-PowerTDFN (PG-TDSON-8-6) package for surface mounting, with a maximum power dissipation of 2.8W (Ta) and 54W (Tc). It operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2820 pF @ 15 V |
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