BSC050N03MSGATMA1
MOSFET N-CH 30V 16A/80A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC050N03MSGATMA1 is a high-performance N-Channel Power MOSFET from the OptiMOS™ series. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 16A at ambient temperature (Ta) and 80A at case temperature (Tc). With a maximum on-resistance of 5mOhm at 30A and 10V Vgs, it is designed for efficient power switching applications. The BSC050N03MSGATMA1 supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 46 nC at 10V. Its input capacitance (Ciss) is rated at 3600 pF maximum at 15V. The component is housed in a PG-TDSON-8-5 package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. Power dissipation is 2.5W (Ta) and 50W (Tc). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 15 V |
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