BSC0503NSIATMA1
MOSFET N-CH 30V 22A/88A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSC0503NSIATMA1 is a 30V N-channel Power MOSFET designed for high-efficiency power conversion. This component features a low on-resistance of 3mOhm at 30A and 10V Vgs, facilitating minimal conduction losses. It offers continuous drain current capabilities of 22A at ambient temperature and 88A at case temperature, with a maximum power dissipation of 2.5W (Ta) and 36W (Tc). The device utilizes the PG-TDSON-8-6 package, a surface-mount 8-PowerTDFN, suitable for demanding thermal management. Key electrical characteristics include a gate charge (Qg) of 20nC (max) at 10V and input capacitance (Ciss) of 1300pF (max) at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is well-suited for applications in automotive, industrial power supplies, and server power.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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