BSC048N025S G
MOSFET N-CH 25V 19A/89A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC048N025S-G is an N-Channel Power MOSFET designed for demanding applications. This component features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C ambient, scaling to 89A at 25°C case temperature. The low on-resistance (Rds On) of 4.8mOhm at 50A and 10V gate drive ensures minimal conduction losses. With a maximum power dissipation of 2.8W (Ta) and 63W (Tc), it supports efficient thermal management. The device is housed in an 8-PowerTDFN (PG-TDSON-8-1) package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 21 nC at 5V and input capacitance (Ciss) of 2670 pF at 15V. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power management, automotive, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 35µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 15 V |
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